Universal Tc depression by irradiation defects in underdoped and overdoped cuprates

Details Universal Tc depression by irradiation defects in underdoped and overdoped cuprates Universal Tc depression by irradiation defects in underdoped and overdoped cuprates

1999-08-27

arxiv.org/abs/cond-mat/9908405v1

Physics

Condensed Matter

Strongly Correlated Electrons

11 pages in Latex/Revtex format, 3 postscript figures

Scientific paper

10.1209/epl/i2000-00238-x

We report on a study of the influence of defects introduced in the CuO$_{2}$ planes of cuprates in a wide range of hole dopings n. T$_{c}$ and electrical resistivity $\rho (T)$ measurements have been performed on electron irradiated YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ and Tl$_{2}$Ba$_{2}$CuO$_{6+x}$ single crystals. A universal scaling between the decrease in T$_{c}$ and $\UNICODE[m]{0x394}\rho_{2D}\UNICODE[m]{0xd7}n$, where $\UNICODE[m]{0x394}\rho _{2D}$ is the increase of the 2D-resistance induced by the defects, is found for all the samples investigated here. This demonstrates that n is the relevant parameter to describe the transport properties all over the phase diagram, in contradiction with a recent suggestion of a change in the number of carriers from n to 1-n at the optimal doping. Moreover, the analysis of our data suggests that strong scattering persists on the overdoped side.

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