Universal saturation of electron dephasing in three-dimensional disordered metals

Details Universal saturation of electron dephasing in three-dimensional disordered metals Universal saturation of electron dephasing in three-dimensional disordered metals

2000-07-26

arxiv.org/abs/cond-mat/0007417v2

J. Phys.: Condens. Matter 13, L119 (2001)

Physics

Condensed Matter

Disordered Systems and Neural Networks

4 pages, 3 eps figures

Scientific paper

10.1088/0953-8984/13/5/102

We have systematically investigated the low-temperature electron dephasing times $\tau_\phi$ in more than 40 three-dimensional polycrystalline impure metals with distinct material characteristics. In all cases, a saturation of the dephasing time is observed below about a (few) degree(s) Kelvin, depending on samples. The value of the saturated dephasing time $\tau_0$ [$\equiv \tau_\phi (T \to 0 {\rm K})$] falls basically in the range 0.005 to 0.5 ns for all samples. Particularly, we find that $\tau_0$ scales with the electron diffusion constant $D$ as $\tau_0 \sim D^{- \alpha}$, with $\alpha$ close to or slightly larger than 1, for over two decades of $D$ from about 0.1 to 10 cm$^2$/s. Our observation suggests that the saturation behavior of $\tau_\phi$ is universal and intrinsic in three-dimensional polycrystalline impure metals. A complete theoretical explanation is not yet available.

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