Universal flow diagram for the magnetoconductance in disordered GaAs layers

Details Universal flow diagram for the magnetoconductance in disordered GaAs layers Universal flow diagram for the magnetoconductance in disordered GaAs layers

2002-04-09

arxiv.org/abs/cond-mat/0204206v1

Phys. Rev. B 66, 233314 (2002)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 5 figures, submitted to Phys. Rev. Lett

Scientific paper

10.1103/PhysRevB.66.233314

The temperature driven flow lines of the diagonal and Hall magnetoconductance data (G_{xx},G_{xy}) are studied in heavily Si-doped, disordered GaAs layers with different thicknesses. The flow lines are quantitatively well described by a recent universal scaling theory developed for the case of duality symmetry. The separatrix G_{xy}=1 (in units e^2/h) separates an insulating state from a spin-degenerate quantum Hall effect (QHE) state. The merging into the insulator or the QHE state at low temperatures happens along a semicircle separatrix G_{xx}^2+(G_{xy}-1)^2=1 which is divided by an unstable fixed point at (G_{xx},G_{xy})=(1,1).

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