Universal characteristics of resonant-tunneling field emission from nanostructured surfaces

Details Universal characteristics of resonant-tunneling field emission from nanostructured surfaces Universal characteristics of resonant-tunneling field emission from nanostructured surfaces

2007-05-26

arxiv.org/abs/0705.3879v1

J. Appl. Phys. 101, 123712 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures, RevTex, to appear in J. Appl. Phys

Scientific paper

10.1063/1.2749284

We have performed theoretical and experimental studies of field emission from nanostructured semiconductor cathodes. Resonant tunneling through electric-field-induced interface bound states is found to strongly affect the field-emission characteristics. Our analytical theory predicts power-law and Lorentzian-shaped current-voltage curves for resonant-tunneling field emission from three-dimensional substrates and two-dimensional accumulation layers, respectively. These predicted line shapes are observed in field emission characteristics from self-assembled silicon nanostructures. A simple model describes formation of an accumulation layer and of the resonant level in these systems.

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