Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System

Details Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System

1999-06-17

arxiv.org/abs/cond-mat/9906285v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 4 figures. Submitted to EP2DS XIII conference 1999

Scientific paper

10.1016/S1386-9477(99)00142-3

Magnetoresistance measurements are presented for a strained p-SiGe quantum
well sample where the density is varied through the B=0 metal-insulator
transition. The close relationship between this transition, the high field Hall
insulator transition and the filling factor $\nu$=3/2 insulating state is
demonstrated.

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