Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2002-05-22
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Scientific paper
10.1103/PhysRevB.67.094421
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of disordered F/N/F perpendicular spin valves as a function of the angle between magnetization vectors is shown to obey a simple universal law. The spin-current induced magnetization torque can be measured by the angular magnetoresistance of these spin valves. The results are generalized to arbitrary magnetoelectronic circuits.
Bauer Gerrit E. W.
Brataas Arne
Huertas-Hernando Daniel
Tserkovnyak Yaroslav
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