Physics – Condensed Matter – Materials Science
Scientific paper
2003-02-10
Physics
Condensed Matter
Materials Science
4 pages, 4 figures
Scientific paper
10.1103/PhysRevB.68.235418
We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide. Experimental measurements and theoretical calculations provide a consistent understanding of the scaling, which reflects the very different device physics of a Schottky barrier transistor with a quasi-one-dimensional channel contacting a sharp edge. A simple analytic model gives explicit scaling expressions for key device parameters such as subthreshold slope, turn-on voltage, and transconductance.
Avouris Ph.
Heinze Stefan
Radosavljevic M.
Tersoff Jerry
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