Ultrasmall In(Ga)As Quantum Dots Grown on Strained GaxIn1-xP Layers

Details Ultrasmall In(Ga)As Quantum Dots Grown on Strained GaxIn1-xP Layers Ultrasmall In(Ga)As Quantum Dots Grown on Strained GaxIn1-xP Layers

2002-10-27

arxiv.org/abs/cond-mat/0210594v1

Physics

Condensed Matter

13 pages, including 3 figures and references list

Scientific paper

InAs self-assembled quantum dots were grown on strained layers of GaxIn1-xP (0 < x < 0.3) on InP substrates. We show that the quantum dots have narrow vertical dimensions, ranging between 2 to 10 monolayers only. The dot layer photoluminescence spectrum is composed of distinct spectral peaks, resulting from the discrete distribution of the dot heights. The dot height distribution depends on the total amount of InAs deposited and on the Ga content of the strained GaxIn1-xP layer underneath. Our experimental results are corroborated by an 8 band k(dot)P model calculations. In particular, we identify and quantify the diffusion of Ga from the GaxIn1-xP layer into the quantum dots.

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