Ultrafast Spin Dynamics in Optically Excited Bulk GaAs at Low Temperatures

Details Ultrafast Spin Dynamics in Optically Excited Bulk GaAs at Low Temperatures Ultrafast Spin Dynamics in Optically Excited Bulk GaAs at Low Temperatures

2009-02-02

arxiv.org/abs/0902.0270v2

Physics

Condensed Matter

Materials Science

7 pages, 3 figures, revised

Scientific paper

This paper presents a study of electron spin dynamics in bulk GaAs at low temperatures for elevated optical excitation conditions. Our time-resolved Faraday rotation measurements yield sub-nanosecond electron spin dephasing-times over a wide range of n-doping concentrations in quantitative agreement with a microscopic treatment of electron spin dynamics. The calculation shows the occurrence and breakdown of motional narrowing for spin dephasing under elevated excitation conditions. We also find a peak of the spin dephasing time around a doping density for which, under lower excitation conditions, a metal-insulator transition occurs. However, the experimental results for high excitation can be explained without a metal-insulator transition. We therefore attribute the peak in spin-dephasing times to the influence of screening and scattering on the spin-dynamics of the excited electrons.

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