Ultrafast dynamics of occupied quantum well states in Pb/Si(111)

Details Ultrafast dynamics of occupied quantum well states in Pb/Si(111) Ultrafast dynamics of occupied quantum well states in Pb/Si(111)

Feb 2012

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2012njph...14b3047r&link_type=abstract

New Journal of Physics, Volume 14, Issue 2, pp. 023047 (2012).

Physics

Scientific paper

We investigate the ultrafast electron dynamics of occupied quantum well states (QWSs) in Pb/Si(111) with time-resolved photoemission spectroscopy. We find an ultrafast increase in binding energy of the QWSs driven by the optical excitation, while the electronic system is in a non-equilibrium state. We explain this transient energetic stabilization in the photoexcited state by an ultrafast modification of the Fermi level pinning, triggered by charge transfer across the Pb/Si interface. In addition, we observe the excitation of a coherent surface phonon mode at a frequency of ∼2 THz, which modulates the QWS binding energy.

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