Ultrafast control of inelastic tunneling in a double semiconductor quantum

Details Ultrafast control of inelastic tunneling in a double semiconductor quantum Ultrafast control of inelastic tunneling in a double semiconductor quantum

2010-10-11

arxiv.org/abs/1010.2004v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to be published in Appl.Phys.Lett

Scientific paper

In a semiconductor-based double quantum well (QW) coupled to a degree of freedom with an internal dynamics, we demonstrate that the electronic motion is controllable within femtoseconds by applying appropriately shaped electromagnetic pulses. In particular, we consider a pulse-driven AlxGa1-xAs based symmetric double QW coupled to uniformly distributed or localized vibrational modes and present analytical results for the lowest two levels. These predictions are assessed and generalized by full-fledged numerical simulations showing that localization and time-stabilization of the driven electron dynamics is indeed possible under the conditions identified here, even with a simultaneous excitations of vibrational modes.

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