Ultrafast Carrier Recombination and Generation Rates for Plasmon Emission and Absorption in Graphene

Details Ultrafast Carrier Recombination and Generation Rates for Plasmon Emission and Absorption in Graphene Ultrafast Carrier Recombination and Generation Rates for Plasmon Emission and Absorption in Graphene

2010-09-14

arxiv.org/abs/1009.2626v2

Phys. Rev. B (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 Pages, 11 Figures, To appear in Phys. Rev. B (2011)

Scientific paper

Electron-hole generation and recombination rates for plasmon emission and absorption in Graphene are presented. The recombination times of carriers due to plasmon emission have been found to be in the tens of femtoseconds to hundreds of picoseconds range. The recombination times depend sensitively on the carrier energy, carrier density, temperature, and the plasmon dispersion. Carriers near the Dirac point are found to have much longer lifetimes compared to carriers at higher energies. Plasmons in a Graphene layer on a polar substrate hybridize with the surface optical phonons and this hybridization modifies the plasmon dispersion. We also present generation and recombination rates of carriers due to plasmon emission and absorption in Graphene layers on polar substrates.

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