Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2DEG

Details Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2DEG Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2DEG

2011-12-21

arxiv.org/abs/1112.5150v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

We report quantum dots fabricated on very shallow 2-dimensional electron gases (2DEG), only 30nm below the surface, in undoped GaAs/AlGaAs heterostuctures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of up to two orders of magnitude in mobility with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

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