Ultra-low noise field-effect transistor from multilayer graphene

Details Ultra-low noise field-effect transistor from multilayer graphene Ultra-low noise field-effect transistor from multilayer graphene

2009-05-27

arxiv.org/abs/0905.4485v1

Appl. Phys. Lett., 95, 082105 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.3206658

We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on graphene band structure, and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers.

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