Ultra fast bit addressing in a magnetic memory matrix with crossed wire write line geometry

Details Ultra fast bit addressing in a magnetic memory matrix with crossed wire write line geometry Ultra fast bit addressing in a magnetic memory matrix with crossed wire write line geometry

2005-02-10

arxiv.org/abs/cond-mat/0502263v1

JOURNAL OF APPLIED PHYSICS 98, 033910 (2005)

Physics

Condensed Matter

Materials Science

30 pages, 6 figures, submitted to Journal of Applied Physics

Scientific paper

An ultra fast bit addressing scheme for magnetic random access memories (MRAM) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by sub nanosecond field pulses making use of the magnetization precession of the free layer. Single spin simulations of the free layer dynamics show that the pulse parameters for programming an arbitrary word of the array can be chosen such that the magnetization of the cells to be written performs either a half or a full precessional turn during application of the programming pulse depending on the initial and final magnetization orientation of the addressed cells. Such bit addressing scheme leads to a suppression of the magnetization ringing in all cells of the memory array thereby allowing ultra high MRAM write clock rates above 1 GHz.

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