Ultra-dense phosphorus in germanium delta-doped layers

Details Ultra-dense phosphorus in germanium delta-doped layers Ultra-dense phosphorus in germanium delta-doped layers

2009-12-03

arxiv.org/abs/0912.0751v1

Appl. Phys. Lett. 94, 162106 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3123291

Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultra-narrow 2-nm-wide layer with an electrically-active sheet carrier concentration of 4x10^13 cm-2 at 4.2 K. These results open up the possibility of ultra-narrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors.

Affiliated with

Also associated with

No associations

Rating

Ultra-dense phosphorus in germanium delta-doped layers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Ultra-dense phosphorus in germanium delta-doped layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra-dense phosphorus in germanium delta-doped layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-419942