Ultimate Depth Resolution and Profile Reconstruction in Sputter Profiling with AES and SIMS

Details Ultimate Depth Resolution and Profile Reconstruction in Sputter Profiling with AES and SIMS Ultimate Depth Resolution and Profile Reconstruction in Sputter Profiling with AES and SIMS

2000-02-29

arxiv.org/abs/cond-mat/0002451v1

Physics

Condensed Matter

Materials Science

23 pages, 8 figures,(ECASIA 99 proc., to be publ. in SIA)

Scientific paper

New developments in quantitative sputter depth profiling during the past ten years are reviewed, with special emphasis on the experimental achievement of ultrahigh depth resolution (below 2 nm for sputtered depths larger than 10 nm). In this region, the depth resolution function generally is asymmetric (i.e.non-Gaussian) and it is governed by the three fundamental parameters: atomic mixing length, roughness and information depth. The so called mxing-roughness-information depth (MRI)-model and its application to the quantitative reconstruction of the in-depth distribution of composition, with a typical accuracy of one monolayer and better, is demonstrated for SIMS and AES depth profiles. Based on the combination of the above three parameters, the ultimate depth resolution is predicted to be about 0.7-1.0 nm. Up to now, values of 1.4-1.6 nm have been reported, and the use of low energy molecular ions, e.g. by using sulfur hexafluoride as sputtering gas, has recently pushed the mixing length down to 0.4-0.6 nm. However, particularly in depth profiling of multilayers, it can be shown that minimizing the rouhgness parameter, including the straggling of the mixing length, is most important for the achievement of the ultimate depth resolution.

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