Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene

Details Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene

2011-09-06

arxiv.org/abs/1109.1131v1

Phys. Rev. Lett. 107, 256801 (2011)

Physics

Condensed Matter

Materials Science

5 pages and 4 figures

Scientific paper

10.1103/PhysRevLett.107.256801

We show that gated bilayer graphene hosts a strong topological insulator (TI) phase in the presence of Rashba spin-orbit (SO) coupling. We find that gated bilayer graphene under preserved time-reversal symmetry is a quantum valley Hall insulator for small Rashba SO coupling $\lambda_{\mathrm{R}}$, and transitions to a strong TI when $\lambda_{\mathrm{R}} > \sqrt{U^2+t_\bot^2}$, where $U$ and $t_\bot$ are respectively the interlayer potential and tunneling energy. Different from a conventional quantum spin Hall state, the edge modes of our strong TI phase exhibit both spin and valley filtering, and thus share the properties of both quantum spin Hall and quantum valley Hall insulators. The strong TI phase remains robust in the presence of weak graphene intrinsic SO coupling.

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