Two Aspects of the Mott-Hubbard Transition in Cr-doped V_2O_3

Details Two Aspects of the Mott-Hubbard Transition in Cr-doped V_2O_3 Two Aspects of the Mott-Hubbard Transition in Cr-doped V_2O_3

2004-07-30

arxiv.org/abs/cond-mat/0407787v1

Physica B 359-361, 642 (2005).

Physics

Condensed Matter

Strongly Correlated Electrons

2 pages, 3 figures, SCES'04 conference proceedings

Scientific paper

10.1016/j.physb.2005.01.181

The combination of bandstructure theory in the local density approximation with dynamical mean field theory was recently successfully applied to V$_2$O$_3$ -- a material which undergoes the f amous Mott-Hubbard metal-insulator transition upon Cr doping. The aim of this sh ort paper is to emphasize two aspects of our recent results: (i) the filling of the Mott-Hubbard gap with increasing temperature, and (ii) the peculiarities of the Mott-Hubbard transition in this system which is not characterized by a diver gence of the effective mass for the $a_{1g}$-orbital.

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