Tunneling spin-galvanic effect

Details Tunneling spin-galvanic effect Tunneling spin-galvanic effect

2003-10-06

arxiv.org/abs/cond-mat/0310111v1

Revised, Phys. Rev. Lett. 93, 056601 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 2 figures

Scientific paper

10.1103/PhysRevLett.93.056601

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons.

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