Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy

Details Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy

2005-09-21

arxiv.org/abs/cond-mat/0509538v1

Journ. Appl. Phys 99, 036110 (2006)

Physics

Condensed Matter

Materials Science

8 pages, 3 figures, submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.2171782

We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at room temperature which increases to 14.7% at 4.2K. The layers show clear separate switching and a small ferromagnetic coupling. A uniaxial in plane anisotropy in the NiMnSb layer leads to different switching characteristics depending on the direction in which the magnetic field is applied, an effect which can be used for sensor applications.

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