Tunneling conductance of graphene NIS junctions

Details Tunneling conductance of graphene NIS junctions Tunneling conductance of graphene NIS junctions

2006-07-19

arxiv.org/abs/cond-mat/0607489v4

Phys. Rev. Lett. 97, 217001 (2006)

Physics

Condensed Matter

Superconductivity

v3, Final published version

Scientific paper

10.1103/PhysRevLett.97.217001

We show that in contrast to conventional normal metal-insulator-superconductor (NIS) junctions, the tunneling conductance of a NIS junction in graphene is an oscillatory function of the effective barrier strength of the insulating region, in the limit of a thin barrier. The amplitude of these oscillations are maximum for aligned Fermi surfaces of the normal and superconducting regions and vanishes for large Fermi surface mismatch. The zero-bias tunneling conductance, in sharp contrast to its counterpart in conventional NIS junctions, becomes maximum for a finite barrier strength. We also suggest experiments to test these predictions.

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