Tunneling conductance of a metal-semiconductor heterostructure with Rashba effect

Details Tunneling conductance of a metal-semiconductor heterostructure with Rashba effect Tunneling conductance of a metal-semiconductor heterostructure with Rashba effect

2008-02-08

arxiv.org/abs/0802.1097v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We theoretically studied the in-plane tunneling spectroscopy of the hybrid structure composed of a metal and a semiconductor with Rashba spin-orbit coupling. We found that the energy spacing between two distinct features in the conductance spectrum can be used to measure the Rashba energy of the semiconductor. We also considered the effect that varying the probability of spin-conserving and spin-flip scattering at the interface has on the overall conductance. Surprisingly, an increase in interface scattering probability can actually result in increased conductance under certain conditions. Particularly, in the tunneling regime, an increase in spin-flip scattering probability enhances the conductance. It is also found that the interfacial scattering greatly affects the spin polarization of the conductance in metal, but hardly affects that in the semiconductor.

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