Tunneling between edge states in a quantum spin Hall system

Details Tunneling between edge states in a quantum spin Hall system Tunneling between edge states in a quantum spin Hall system

2008-11-19

arxiv.org/abs/0811.3222v2

Phys. Rev. Lett. 102, 096806 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures; published version

Scientific paper

10.1103/PhysRevLett.102.096806

We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

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