Tunneling-assisted impact ionization fronts in semiconductors

Details Tunneling-assisted impact ionization fronts in semiconductors Tunneling-assisted impact ionization fronts in semiconductors

2001-11-15

arxiv.org/abs/cond-mat/0111278v1

J. Appl. Phys. 92, 958 (2002)

Physics

Condensed Matter

Materials Science

12 pages, 6 figures

Scientific paper

10.1063/1.1486258

We propose a novel type of ionization front in layered semiconductor structures. The propagation is due to the interplay of band-to-band tunneling and impact ionization. Our numerical simulations show that the front can be triggered when an extremely sharp voltage ramp ($\sim 10 {\rm kV/ns}$) is applied in reverse direction to a Si $p^+-n-n^+-$structure that is connected in series with an external load. The triggering occurs after a delay of 0.7 to 0.8 ns. The maximal electrical field at the front edge exceeds $10^6 {\rm V/cm}$. The front velocity $v_f$ is 40 times faster than the saturated drift velocity $v_s$. The front passes through the $n-$base with a thickness of $100 {\mu m}$ within approximately 30 ps, filling it with dense electron-hole plasma. This passage is accompanied by a voltage drop from 8 kV to dozens of volts. In this way a voltage pulse with a ramp up to $500 {\rm kV/ns}$ can be applied to the load. The possibility to form a kilovolt pulse with such a voltage rise rate sets new frontiers in pulse power electronics.

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