Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Details Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

2009-07-07

arxiv.org/abs/0907.1202v1

Physics

Condensed Matter

Materials Science

9 pages, 3 figures

Scientific paper

We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of $~8%$ in case of spins oriented either along $[1\bar{1}0]$ or $[110]$ directions and $~25%$ anisotropy between in-plane and perpendicular-to-plane orientation of spins.

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