Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects

Details Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects

2009-04-20

arxiv.org/abs/0904.3017v1

Phys. Rev. B 80, 121301(R) (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

10.1103/PhysRevB.80.121301

We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.

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