Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer

Details Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer

2004-07-28

arxiv.org/abs/cond-mat/0407735v1

Phys. Rev. Lett. 93, 117203, (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, submitted to PRL

Scientific paper

10.1103/PhysRevLett.93.117203

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material.

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