Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system

Details Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system

2004-11-03

arxiv.org/abs/cond-mat/0411093v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, submitted to APL Minor revisions

Scientific paper

10.1063/1.1871340

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected 2D-2D tunneling results, we have found additional tunneling features that are related to the 1D quantum wires.

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