Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation

Details Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation

2009-03-25

arxiv.org/abs/0903.4271v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 8 figures

Scientific paper

The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity development with increasing corrugation amplitude. The enhanced electron scattering is attributed to the curvature-induced potential energy that affects the motion of electrons confined to a thin curved film. Geometric conditions and microscopic mechanism of the stepwise resistivity are discussed in detail.

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