Tuning of structure inversion asymmetry by the $δ$-doping position in (001)-grown GaAs quantum wells

Details Tuning of structure inversion asymmetry by the $δ$-doping position in (001)-grown GaAs quantum wells Tuning of structure inversion asymmetry by the $δ$-doping position in (001)-grown GaAs quantum wells

2009-03-06

arxiv.org/abs/0903.1232v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages 2 figures

Scientific paper

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.

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