Physics – Condensed Matter – Materials Science
Scientific paper
2007-07-30
Physica B 401-402, 454 (2007)
Physics
Condensed Matter
Materials Science
14 pages, 4 figures. Accepted for publication in the Proceedings of the 24th International Conference on Defects in Semiconduc
Scientific paper
10.1016/j.physb.2007.08.210
We have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga1-xMnxP1-yNy/GaP and Ga1-xMnxAs1-yPy/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga1-xMnxAs grown on larger lattice constant (In,Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III-Mn-V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga1-xMnxAs1-yPy with increasing y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases.
Beeman Jeffrey W.
Dubon Oscar D.
Stone Peter R.
Yu Kin M.
No associations
LandOfFree
Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-221824