Tuning carbon nanotube bandgaps with strain

Details Tuning carbon nanotube bandgaps with strain Tuning carbon nanotube bandgaps with strain

2002-11-08

arxiv.org/abs/cond-mat/0211152v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 5 figures; minor changes and corrections

Scientific paper

10.1103/PhysRevLett.90.156401

We show that the band structure of a carbon nanotube (NT) can be dramatically altered by mechanical strain. We employ an atomic force microscope tip to simultaneously vary the NT strain and to electrostatically gate the tube. We show that strain can open a bandgap in a metallic NT and modify the bandgap in a semiconducting NT. Theoretical work predicts that bandgap changes can range between +100meV and -100meV per 1% stretch, depending on NT chirality, and our measurements are consistent with this predicted range.

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