Tungsten oxide nanowire growth by chemically-induced strain

Details Tungsten oxide nanowire growth by chemically-induced strain Tungsten oxide nanowire growth by chemically-induced strain

2006-03-28

arxiv.org/abs/cond-mat/0603746v1

J. Phys. Chem. B 109 (2005) 17787

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

We have investigated the formation of tungsten oxide nanowires under different CVD conditions. We find that exposure of oxidized tungsten films to hydrogen and methane at 900C leads to the formation of a dense array of typically 10 nm diameter nanowires. Structural and chemical analysis shows that the wires are crystalline WO3. We propose a chemically-driven whisker growth mechanism in which interfacial strain associated with the formation of tungsten carbide stimulates nanowire growth. This might be a general concept, applicable also in other nanowire systems.

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