Tunable temperature induced magnetization jump in a GdVO3 single crystal

Details Tunable temperature induced magnetization jump in a GdVO3 single crystal Tunable temperature induced magnetization jump in a GdVO3 single crystal

2006-01-04

arxiv.org/abs/cond-mat/0601066v1

Physics

Condensed Matter

Strongly Correlated Electrons

17 pages, 8 Figures

Scientific paper

10.1103/PhysRevB.73.024428

We report a novel feature of the temperature induced magnetization jump observed along the a-axis of the GdVO3 single crystal at temperature TM = 0.8 K. Below TM, the compound shows no coercivity and remanent magnetization indicating a homogenous antiferromagnetic structure. However, we will demonstrate that the magnetic state below TM is indeed history dependent and it shows up in different jumps in the magnetization only when warming the sample through TM. Such a magnetic memory effect is highly unusual and suggesting different domain arrangements in the supposedly homogenous antiferromagnetic phase of the compound.

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