Tunable resistivity of individual magnetic domain walls

Details Tunable resistivity of individual magnetic domain walls Tunable resistivity of individual magnetic domain walls

2011-12-06

arxiv.org/abs/1112.1239v1

Phys. Rev. Lett. 108, 037205 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted to Physical Review Letters 4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.108.037205

Despite the relevance of current-induced magnetic domain wall (DW) motion for new spintronics applications, the exact details of the current-domain wall interaction are not yet understood. A property intimately related to this interaction is the intrinsic DW resistivity. Here, we investigate experimentally how the resistivity inside a DW depends on the wall width D, which is tuned using focused ion beam irradiation of Pt/Co/Pt strips. We observe the nucleation of individual DWs with Kerr microscopy, and measure resistance changes in real-time. A 1/D^2 dependence of DW resistivity is found, compatible with Levy-Zhang theory. Also quantitative agreement with theory is found by taking full account of the current flowing through each individual layer inside the multilayer stack.

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