Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation

Details Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation

2011-04-19

arxiv.org/abs/1104.3635v1

Physical Review B 83, 235410 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

21 pages, 8 figures (including supplementary materials); http://link.aps.org/doi/10.1103/PhysRevB.83.235410

Scientific paper

10.1103/PhysRevB.83.235410

We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure graphitic multilayers transforms into a negative MR after introducing significant short-range disorders (implanted boron or carbon atoms), consistent with recent non-Markovian transport theory. Our experiments suggest the important role of the non-Markovian process in the intriguing MR behavior for graphitic systems, and open a new window for understanding transport phenomena beyond the Drude-Boltzmann approach and tailoring the electronic properties of graphitic layers.

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