Tunable effective g-factor in InAs nanowire quantum dots

Details Tunable effective g-factor in InAs nanowire quantum dots Tunable effective g-factor in InAs nanowire quantum dots

2005-07-19

arxiv.org/abs/cond-mat/0507433v1

Phys. Rev. B 72, 201307 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.72.201307

We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy. The values of the electron g-factors of the first few electrons entering the dot are found to strongly depend on dot size and range from close to the InAs bulk value in large dots |g^*|=13 down to |g^*|=2.3 for the smallest dots. These findings are discussed in view of a simple model.

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