Tunable Bandgap Opening in the Proposed Structure of Silicon Doped Graphene

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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  [ 4.50 ] – excellent Voters 1   Comments 1

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4 pages, 4 figures

Scientific paper

A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation for different silicon sites in the host graphene, the effect of silicon concentration and unit cell geometry on the bandgap of the proposed structure is also investigated. Chemically silicon doped graphene results in an energy gap as large as 2eV according to DFT calculations. As we will show, in contrast to previous bandgap engineering methods, such structure has significant advantages including wide gap tuning capability and its negligible dependency on lattice geometry.

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After the discovery of Graphene in 2004, the 2D graphene-based structures supposed to be able to become an alternative for the next generation of semiconductor devices. However, the intrinsic graphene has no band gap and so has metallic behavior. Thus, during the last 5 years several efforts have been made for introducing a band gap and engineering the band structure. The idea presented in this paper seems to be reliable and applicable. However, the authors have only reported the proposed structure and simulation results but did not do any fabrication. Further research and experimental results might be more interesting.

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