Trends in bonding configuration at SiC/III-V semiconductor interfaces

Details Trends in bonding configuration at SiC/III-V semiconductor interfaces Trends in bonding configuration at SiC/III-V semiconductor interfaces

2002-03-24

arxiv.org/abs/cond-mat/0203495v2

Applied Physics Letters, Vol. 79, No.11, 1643-1645, (2001)

Physics

Condensed Matter

Materials Science

6 pages, 3 figures

Scientific paper

10.1063/1.1402162

The structural and electronic properties of interfaces between beta-SiC and III-V semiconductors are studied by first-principles calculations. Favorable bonding configurations are found to form between Si-V and C-III (model A) for BN, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs and InSb, and Si-III and C-V (model B) for BP, BAs, BSb, AlSb and GaSb. The relationship between formation energy difference and lattice constant difference as well as charge distribution for these two models is found. The origin of bonding configurations can be explained in terms of the ionicity of III-V semiconductors, electrostatic effect, charge distribution and band-structure component.

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