Trapping Surface Electrons on Graphene Layers and Islands

Details Trapping Surface Electrons on Graphene Layers and Islands Trapping Surface Electrons on Graphene Layers and Islands

2011-09-09

arxiv.org/abs/1109.1948v2

Phys. Rev. B 85, 081402(R) (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.85.081402

We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of mid-gap clean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.

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