Trapping electrons in semiconductor air bubbles: A theoretical approach

Details Trapping electrons in semiconductor air bubbles: A theoretical approach Trapping electrons in semiconductor air bubbles: A theoretical approach

2006-03-22

arxiv.org/abs/cond-mat/0603599v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures. The paper has been submitted to Phys.Rev.B

Scientific paper

10.1103/PhysRevB.73.235350

The role of image charges in nanoporous semiconductor materials is investigated within the framework of the effective mass and envelope function approximations. We show that nanometric air bubbles in these materials can act as electron-trapping centers. This trapping capability originates from a deep stabilizing self-polarization potential well induced by the air - semiconductor dielectric mismatch which can surpass the electroaffinity barrier. The trapping strength is a function of the pore size and the bulk parameters of the matrix material. A {\it trapping parameter} characteristic for each semiconductor material is defined. This parameter provides a simple way to ascertain the maximum pore size in a given material which is able to induce self-trapping of excess electrons.

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