Transport Through an Electrostatically Defined Quantum Dot Lattice in a Two-Dimensional Electron Gas

Details Transport Through an Electrostatically Defined Quantum Dot Lattice in a Two-Dimensional Electron Gas Transport Through an Electrostatically Defined Quantum Dot Lattice in a Two-Dimensional Electron Gas

2012-02-15

arxiv.org/abs/1202.3267v2

Phys. Rev. B 85, 075427 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 4 figures

Scientific paper

Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.

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