Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Accepted for publication in International Journal of Nanoscience

Scientific paper

The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0 2D metal--insulator transition. We show that the observed localization and Landau quantization is due to the Sigma_xy(T)anomalous T-dependence.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-668919

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.