Transport in disordered two-dimensional topological insulator

Details Transport in disordered two-dimensional topological insulator Transport in disordered two-dimensional topological insulator

2011-06-09

arxiv.org/abs/1106.1824v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4.5 pages, 4 figures

Scientific paper

We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements in the absence of the magnetic field and observe large signal due to the edge states. It demonstrates, that the edge states can propagate over long distance 1 mm, and, therefore, there is no difference between local and non local electrical measurements in topological insulator. In the presence of the in-plane magnetic field we find strong decrease of the local resistance and complete suppression of the nonlocal resistance. We attribute this observation to the transition between topological insulator and bulk metal induced by the in-plane magnetic field.

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