Transmission Electron Microscopy Studies on RF Sputtered Copper Ferrite Thin Films

Details Transmission Electron Microscopy Studies on RF Sputtered Copper Ferrite Thin Films Transmission Electron Microscopy Studies on RF Sputtered Copper Ferrite Thin Films

2010-12-28

arxiv.org/abs/1012.5743v1

Physics

Condensed Matter

Materials Science

5 pages and 3 figures

Scientific paper

Copper ferrite thin films were rf sputtered at a power of 50W. The as deposited films were annealed in air at 800{\deg}C and slow cooled. The transmission electron microscope (TEM) studies were carried out on as deposited as well as on slow cooled film. Significantly larger defect concentration, including stacking faults, was observed in 50W as deposited films than the films deposited at a higher rf power of 200W. The film annealed at 800{\deg}C and then slow cooled showed an unusual grain growth upto 180nm for a film thickness of ~240nm. These grains showed Kikuchi pattern.

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