Transit-Time Spin Field-Effect-Transistor

Details Transit-Time Spin Field-Effect-Transistor Transit-Time Spin Field-Effect-Transistor

2007-03-12

arxiv.org/abs/cond-mat/0703300v1

Appl. Phys. Lett. 90, 262501 (2007)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2752015

We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary semiconductor. This provides the possibility of realizing a spin field-effect-transistor in Si, using electrostatic transit-time control in a perpendicular magnetic field, rather than Rashba effect with spin-orbit interaction.

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