Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2005-12-16
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
4 pages and 9 figures
Scientific paper
The transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature effect on the transient current through a single quantum dot embedded into asymmetry barrier. It is found that the tunneling rate ratio significantly influences the feature of transient current. Finally, the oscillation structures on the exponential growth transient current of single hole transistors composed of germanium quantum dots is analyzed.
Kuo David M. -T.
Lai W. T.
Li Pei-Wen
No associations
LandOfFree
Transient tunneling current of single electron transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Transient tunneling current of single electron transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transient tunneling current of single electron transistors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-111900