Transient response under ultrafast interband excitation of an intrinsic graphene

Details Transient response under ultrafast interband excitation of an intrinsic graphene Transient response under ultrafast interband excitation of an intrinsic graphene

2009-12-02

arxiv.org/abs/0912.0423v1

Physical Review B 81, 085421 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 8 figures

Scientific paper

The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon scattering and the interband generation-recombination transitions due to thermal radiation are analyzed. The distributions of carriers are obtained for the limiting cases when carrier-carrier scattering is negligible and when the intercarrier scattering imposes the quasiequilibrium distribution. The transient optical response (differential reflectivity and transmissivity) on a probe radiation and transient photoconductivity (response on a weak dc field) appears to be strongly dependent on the relaxation and recombination dynamics of carriers.

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