Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-07-07
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
15 pages, 4 figures
Scientific paper
Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an electrical burn-in technique and the common gate hysteresis was removed using PMMA and baking, leading to field effect transistors with large on/off ratios up to 10^5. Further segmentation into 200 nm short semiconducting SWCNT devices created quantum dots which display conductance oscillations in the Coulomb blockade regime. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e. laterally ordered and scalable, as required for advanced quantum electronic devices.
Ai Nan
Begliarbekov Milan
Choi Daniel S.
Kumar Kitu
Song Qiang
No associations
LandOfFree
Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-344982